2sk3462 TOSHIBA Semiconductor CORPORATION, 2sk3462 Datasheet

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2sk3462

Manufacturer Part Number
2sk3462
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
2SK3462
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Switching Regulator, DC/DC Converter and
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
4 V gate drive
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Handle with care.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
temperature
Characteristic
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
= 50 V, T
GS
DC
Pulse (t = 1 ms)
DSS
= 20 kΩ)
th
ch
= 1.5~3.5 V (V
= 25°C, L = 6.7 mH, I
(Note 1)
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
fs
(Ta = 25°C)
| = 2.2 S (typ.)
Symbol
DS
V
V
V
DS
E
E
T
I
I
T
P
DGR
GSS
DSS
I
DP
AR
AS
AR
stg
D
ch
R
R
D
Symbol
2SK3462
= 250 V)
th (ch-a)
= 10 V, I
th (ch-c)
= 1.2 Ω (typ.)
AR
= 3 A, R
D
−55~150
Rating
= 1 mA)
36.2
250
250
±20
150
20
3
6
3
2
1
Max
6.25
125
G
= 25 Ω
Unit
mJ
mJ
°C
°C
°C/W
°C/W
W
Unit
V
V
V
A
A
Weight: 0.36 g (typ.)
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
JEDEC
JEITA
TOSHIBA
2-7B1B
2-7J1B
SC-64
SC-64
2006-11-21
2SK3462
Unit: mm

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2sk3462 Summary of contents

Page 1

... 36 150 °C ch −55~150 T °C stg Symbol Max Unit R 6.25 °C/W th (ch-c) R 125 °C/W th (ch- Ω 2SK3462 Unit: mm JEDEC ― JEITA SC-64 TOSHIBA 2-7B1B Weight: 0.36 g (typ.) JEDEC ― JEITA SC-64 TOSHIBA 2-7J1B Weight: 0.36 g (typ.) 2006-11-21 ...

Page 2

... Test Condition ⎯ ⎯ I DRP = DSF /dt = 100 A/μ 2SK3462 Min Typ. Max ⎯ ⎯ ±10 ⎯ ⎯ 100 ⎯ ⎯ 250 ⎯ 1.5 3.5 ⎯ 1.2 1.7 ⎯ 0.5 2.2 ⎯ ⎯ 267 ⎯ ⎯ ...

Page 3

... Drain-source voltage Gate-source voltage V 10 Common source Tc = 25° Pulse test 3 1 0.5 0.3 0 0.01 0.03 3 2SK3462 I – – Common source Tc = 25°C Pulse test ...

Page 4

... Drain-source voltage −80 −40 30 100 Dynamic input/output characteristics 250 200 150 100 50 0 200 0 4 2SK3462 I – −1 3 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 ( – Common source ...

Page 5

... Pulse width t (S) w 100 Channel temperature (initial −15 V 1000 Test circuit = 25 Ω 6 2SK3462 – 100 125 150 (° VDSS Waveform ⎛ ⎞ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK3462 20070701-EN 2006-11-21 ...

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