2sk3462 TOSHIBA Semiconductor CORPORATION, 2sk3462 Datasheet - Page 5

• Manufacturer Part Number: 2sk3462
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.05
0.03
0.01
100
0.5
0.3
0.1
50
30
10
5
3
1
1
Curves must be derated linearly
with increase in temperature.
* Single nonrepetitive pulse
I D max (pulsed) *
I D max (continuous)
Tc = 25°C
3
Drain-source voltage V
5
0.05
0.03
0.01
0.5
0.3
0.1
10
Safe operating area
10 μ
5
3
1
10
0.01
0.02
Duty = 0.5
0.2
0.1
DC
30 50
1 ms *
100 μ
V DSS max
0.05
100
DS
100 μs *
(V)
300 500
1 m
Single pulse
1000
Pulse width t
r
th
10 m
– t
5
w
w
R
V
DD
G
(S)
= 25 Ω
= 50 V, L = 6.7 mH
100
80
60
40
20
−15 V
100 m
0
25
15 V
Test circuit
Channel temperature (initial) T
P DM
Duty = t/T
R th (ch-c) = 6.25°C/W
50
1
t
T
75
E
AS
Ε AS
– T
V
DD
=
ch
100
B
10
2
1
Waveform
VDSS
I
⋅
AR
L
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
2006-11-21
B VDSS
2SK3462
150
−
V DD
⎞
⎟
⎟
⎠