2sk3462 TOSHIBA Semiconductor CORPORATION, 2sk3462 Datasheet - Page 3

• Manufacturer Part Number: 2sk3462
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.5
0.3
0.1
10
3
2
1
0
6
5
4
3
2
1
0
5
3
1
0.1
0
0
Common source
Tc = 25°C
Pulse test
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
1
Drain-source voltage V
Gate-source voltage V
0.3
Drain current I
2
2
0.5
⎪Y
I
I
Tc = −55°C
D
D
15
fs
– V
– V
⎪ – I
100
3
1
10
25
DS
GS
8
D
D
6
4
GS
4
DS
100
(A)
25
Tc = −55°C
3
V GS = 4 V
(V)
(V)
5
5
4.6
4.4
4.2
10
6
6
3
0.5
0.3
0.1
10
10
0.01
6
4
2
0
8
6
4
2
0
5
3
1
0
0
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
V GS = 10 V
Pulse test
0.03
Gate-source voltage V
Drain-source voltage V
4
Drain current I
0.1
10
R
V
DS (ON)
8
I
15
DS
D
– V
0.3
– V
10
DS
GS
− I
8
12
D
V GS = 4 V
Common source
Tc = 25°C
Pulse test
D
I D = 1 A
GS
20
1
DS
(A)
6
4.5
3A
(V)
(V)
16
3
2006-11-21
2SK3462
5.5
5
30
20
10