mt48h16m16lfbf-75 Micron Semiconductor Products, mt48h16m16lfbf-75 Datasheet - Page 49

• Manufacturer Part Number: mt48h16m16lfbf-75
• Description: 256mb X16, X32 Mobile Sdram
• Manufacturer: Micron Semiconductor Products

Table 14:
PDF:09005aef8219eeeb/Source: 09005aef8219eedd
256mb_x16_sdram_y36m_1.fm - Rev G 2/08 EN
Parameter/Condition
Operating current:
Active mode; BL = 1; READ or WRITE;
Standby current:
Power-down mode; All banks idle; CKE = LOW
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Non-power-down mode; All banks idle; CKE = HIGH
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Active mode; CKE = LOW; CS# = HIGH; All banks active; No accesses in
progress
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Standby current:
Active mode; CKE = HIGH; CS# = HIGH; All banks active after
No accesses in progress
Precharge nonpower-down standby current with clock stopped: All
banks idle; CKE is LOW, CS is HIGH; CK = LOW, CK# = HIGH; Address and
control inputs are switching; Data bus inputs are stable
Operating current:
Burst mode; READ or WRITE; All banks active, half DQs toggling every
cycle
Auto refresh current:
CKE = HIGH; CS# = HIGH
Deep power-down
I
Notes: 1, 5, 6, 11, 13; notes appear on page 52 and 53; V
DD
Specifications and Conditions (x32)
t
RC =
t
RC (MIN)
t
t
RFC =
RFC = 7.8125µs
49
t
RFC (MIN)
t
RCD met;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
/V
DD
standard
standard
Symbol
I
I
I
I
I
power
power
I
I
Q = 1.7–1.95V
I
I
DD
I
DD
DD
DD
DD
DD
DD
low-
low-
I
DD
DD
DD
I
I
I
256Mb: x16, x32 Mobile SDRAM
DD
DD
DD
DD
I
ZZ
2NS
3NS
2PS
2PS
3PS
2N
3N
2P
2P
3P
1
4
5
6
300
220
300
220
120
100
-75
95
20
25
10
10
Electrical Specifications
5
3
5
5
Max
©2006 Micron Technology, Inc. All rights reserved
300
220
300
220
115
90
20
25
10
95
10
-8
5
5
3
5
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
Notes
18, 26
19, 27
29, 30
1, 18,
1, 12,
1, 12,
1, 18,
1, 12,
19
30
30
30
30
19
19
19