mc68hc908ld60 Freescale Semiconductor, Inc, mc68hc908ld60 Datasheet - Page 58

• Manufacturer Part Number: mc68hc908ld60
• Description: M68hc08 Microcontrollers Microcontroller
• Manufacturer: Freescale Semiconductor, Inc

FLASH Memory
Technical Data
58
NOTE:
The bit definitions for FLCR are the same for FLCR1 for the other array.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
The 13k-byte FLASH array is programmed in double bytes. The FLASH
control register 1 (FLCR1) is used in conjunction with the 13k-byte
FLASH even byte write buffer register (13KEBUF) for programming
operations. See
(13KEBUF)
This read/write bit configures the memory for erase operation. ERASE
is interlocked with the PGM bit such that both bits cannot be equal to
1 or set to 1 at the same time.
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can only be set if
either PGM = 1 or ERASE = 1 and the proper sequence for program
or erase is followed.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Mass Erase operation not selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
and
4.4.1 13k-Byte FLASH Even Byte Write Buffer
4.7 FLASH Program
FLASH Memory
Operation.
MC68HC908LD60
Freescale Semiconductor
—
Rev. 1.1