pef82902 Infineon Technologies Corporation, pef82902 Datasheet - Page 213

• Manufacturer Part Number: pef82902
• Description: 4b3t Second Generation Modular Isdn Nt Intelligent Extended
• Manufacturer: Infineon Technologies Corporation

2)
3)
Table 39
Receive Path
Signal / (noise + total harmonic distortion)
DC-level at AD-output
Threshold of level detect
(measured between AIN and BIN with
respect to zero signal)
Input impedance AIN/BIN
Transmit Path
Signal / (noise + total harmonic distortion)
Common mode DC-level
Offset between AOUT and BOUT
Absolute peak voltage for a single +3 or -3
pulse measured between AOUT and
BOUT
Output impedance AOUT/BOUT:
Power-up
Power-down
1)
2)
3)
4)
Data Sheet
Requirement ITU-T I.430, chapter 8.5.1.1b): ’When transmitting a binary zero, the output impedance shall be
> 20 .’: Must be met by external circuitry.
Requirement ITU-T I.430, chapter 8.5.1.1b), Note: ’The output impedance limit shall apply for a nominal load
impedance (resistive) of 50 . The output impedance for each nominal load shall be defined by determining
the peak pulse amplitude for loads equal to the nominal value +/- 10%. The peak amplitude shall be defined
as the the amplitude at the midpoint of a pulse. The limitation applies for pulses of both polarities.’
Test conditions: 1.4 Vpp differential sine wave as input on AIN/BIN with long range (low, critical range).
The percentage of the "1 "-values in the PDM-signal.
Interpretation and test conditions: The sum of noise and total harmonic distortion, weighted with a low pass
filter 0 to 80 kHz, is at least 70 dB below the signal for an evenly distributed but otherwise random sequence
of +3, +1, -1, -3.
The signal amplitude measured over a period of 1 min. varies less than 1%.
4)
U-Transceiver Characteristics
1)
3)
199
Limit Values
min.
65
45
10
80
70
1.61
2.42
typ.
50
1.65
2.5
0.8
3
Electrical Characteristics
max.
55
23
1.69
35
2.58
1.5
6
PEF 81902
2001-11-12
Unit
dB
%
mV
peak
k
dB
V
mV
V
2)