lmv358amu8x-nl Fairchild Semiconductor, lmv358amu8x-nl Datasheet - Page 3

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lmv358amu8x-nl

Manufacturer Part Number
lmv358amu8x-nl
Description
General Purpose, Low Cost, Rro Amplifier
Manufacturer
Fairchild Semiconductor
Datasheet
LMV321/LMV358/LMV324
Absolute Maximum Ratings
Recommended Operating Conditions
Electrical Specifications
(T
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels are
determined from tested parameters.
Notes:
1. Guaranteed by testing or statistical analysis at +25°C.
2. +IN and -IN are gates to CMOS transistors with typical input bias current of <1nA. CMOS leakage is too small to practically measure.
REV. 1A April 2004
Parameter
Supply Voltages
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature, 10 seconds
Input Voltage Range
Parameter
Operating Temperature Range
Power Supply Operating Range
Parameter
AC Performance
Gain Bandwidth Product
Phase Margin
Gain Margin
Slew Rate
Input Voltage Noise
Crosstalk: LMV358
DC Performance
Input Offset Voltage
Average Drift
Input Bias Current
Input Offset Current
Power Supply Rejection Ratio
Supply Current (Per Channel)
Input Characteristics
Input Common Mode Voltage Range
Common Mode Rejection Ratio
Output Characteristics
Output Voltage Swing
c
= 25°C, V
LMV324
s
= +2.7V, G = 2, R
2
1
2
1
1
L
1
= 10k
1
Conditions
C
V
>50kHz
100kHz
100kHz
DC
LO
HI
R
R
L
o
L
L
= 50pF, R
= 1V
= 10k
= 10k
to V
s
pp
/2, R
to V
to V
L
= 2k to V
f
= 10k , V
s
s
/2; LO
/2; HI
1
1
s
/2
o (DC)
Min.
= V
0.1
50
50
0
cc
/2; unless otherwise noted)
-0.25
Typ.
0.01
2.69
1.2
1.5
1.7
1.5
52
17
36
91
80
<1
<1
65
80
70
8
- V s -0.5
Min.
Min.
-65
-40
2.5
0
+V s +0.5
Max.
120
1.3
2.6
Max.
+175
+150
+260
Max.
+125
7
5.5
+6
DATA SHEET
nV/ Hz
MHz
V/ s
Unit
Unit
Unit
deg
mV
V/°C
dB
dB
dB
nA
nA
dB
dB
°C
°C
°C
°C
V
V
V
V
V
V
V
A
3

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