tc58v64bft TOSHIBA Semiconductor CORPORATION, tc58v64bft Datasheet - Page 4

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tc58v64bft

Manufacturer Part Number
tc58v64bft
Description
64-mbit Bits Cmos Nand E2prom
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = = = = 0° to 70°C, V
AC TEST CONDITIONS
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
SYMBOL
t
t
t
REAID
t
t
t
t
t
t
t
t
RSTO
CSTO
t
t
t
t
t
t
t
t
t
t
t
RHW
WHC
WHR
t
CEH
t
REH
t
CRY
CLS
CLH
t
t
ALH
t
t
WW
t
t
t
REA
RHZ
CHZ
AR1
t
AR2
t
RST
ALS
WP
WC
WH
t
WB
CS
CH
DS
DH
RR
RP
RC
OH
CR
RB
t
IR
R
CLE Setup Time
CLE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
Data Output Hold Time
Output-High-impedance-to- RE Rising Edge
ALE Low to RE Low (ID Read)
Memory Cell Array to Starting Address
ALE Low to RE Low (Read Cycle)
Device Reset Time (Read/Program/Erase)
RE Access Time (Serial Data Access)
RE Access Time (ID Read)
RE High to Output High Impedance
RE High Hold Time
RE Access Time (Status Read)
RE High to WE Low
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE Setup Time
CE Hold Time
WE High Hold Time
WP High to WE Low
CE High Time for Last Address in Serial Read Cycle
CE High to Output High Impedance
CE Access Time (Status Read)
WE High to CE Low
WE High to RE Low
CE Low to RE Low (ID Read)
WE High to Busy
CE High to Ready (When interrupted by CE in Read Mode)
CC
PARAMETER
= = = = 2.7 V to 3.6 V)
PARAMETER
MIN
100
100
100
100
10
10
25
10
20
10
50
15
20
35
50
¾
¾
10
¾
¾
15
¾
¾
30
30
¾
¾
50
¾
¾
¾
0
0
0
0
0
C
L
(100 pF) + 1 TTL
CONDITION
2.4 V, 0.4 V
1.5 V, 1.5 V
1.5 V, 1.5 V
t
r
6/10/500
(
3 ns
MAX
RY
200
200
1 +
35
35
30
20
35
45
25
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
¾
/
BY
)
2001-10-24 4/33
TC58V64BFT
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
m s
ns
ns
ns
m s
m s
NOTES
(1) (2)
(2)

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