tc58v64bft TOSHIBA Semiconductor CORPORATION, tc58v64bft Datasheet - Page 5

• Manufacturer Part Number: tc58v64bft
• Description: 64-mbit Bits Cmos Nand E2prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

PROGRAMMING AND ERASING CHARACTERISTICS
RY
Note: (1) CE High to Ready time depends on the pull-up resistor tied to the
t
N
t
(1): Refer to Application Note (11) toward the end of this document.
PROG
BERASE
/
SYMBOL
RE
CE
BY
(2) Sequential Read is terminated when t
(Refer to Application Note (8) toward the end of this document.)
is less than 30 ns,
Programming Time
Number of Programming Cycles on Same
Page
Block Erasing Time
525
PARAMETER
RY
526
/
BY
signal stays Ready.
527
CEH
is greater than or equal to 100 ns. If the RE to CE delay
A
MIN
¾
¾
¾
t
CEH
Busy
200 to 300
³ 100 ns
t
CRY
TYP.
¾
(Ta = = = = 0° to 70°C, V
2
A
: 0 to 30 ns ® Busy signal is not output.
RY
1000
MAX
10
*
5
/
BY
pin.
2001-10-24 5/33
* : V
CC
UNIT
TC58V64BFT
ms
m s
IH
= = = = 2.7 V to 3.6 V)
or V
IL
NOTES
(1)