fdc6020c-f077 Fairchild Semiconductor, fdc6020c-f077 Datasheet
fdc6020c-f077
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fdc6020c-f077 Summary of contents
Page 1
... November 2003 = 55 mΩ – 4.5 V DS(ON mΩ – 2.5 V DS(ON mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON ( (P) Q1 (P) Q2 Units 20 V ± 1.6 W 1.8 1.2 –55 to +150 °C 68 °C/W 1 Quantity 8mm 3000 units FDC6020C Rev B(W) ...
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... 753 pF Q2 677 Q1 163 pF Q2 171 Ω 2 1 1 1.8 FDC6020C RevB (W) ...
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... CA 68°C/W when 2 mounted on a 1in pad copper (Single Operation). Type Min Typ Max Units Q1 –1 1.3 Q1 –0.8 –1 0.7 1 102°C/W when mounted on a minimum pad copper (Single Operation). FDC6020C RevB (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6020C RevB ( 1.4 ...
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... Figure 8. Capacitance Characteristics 10µ 100 0.01 Figure 10. Single Pulse Maximum MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 102°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. FDC6020C RevB (W) 1000 ...
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... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6020C RevB ( 1.2 ...
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... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 102°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 102 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC6020C RevB (W) 20 1000 ...
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... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Standard Dual Configuration FDC6020C RevB (W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...