tps859 TOSHIBA Semiconductor CORPORATION, tps859 Datasheet - Page 11
tps859
Manufacturer Part Number
tps859
Description
Toshiba Photo Ic Silicon Epitaxial Planar
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPS859.pdf
(13 pages)
10000
1000
100
1.2
1.1
1.0
0.9
0.8
40
35
30
25
20
15
10
10
5
0
1
0
1
1
Ambient temperature Ta (°C)
20
2
Supply voltage V
10
Luminance E
Relative I
40
3
P – Ta
I
L
100
– E
L
Ta = 25°C
Ev= 100 lx
Using fluorescent light
V
– V
60
V
4
CC
CC
(lx)
1000
Ta = 25°C
V CC = 3 V
(V)
80
5
(typ)
(typ)
10000
100
6
11
0.001
10000
0.01
1000
0.1
100
1.2
1.1
1.0
0.9
0.8
10
1
20
−40
1
1
V CC = 3 V
−20
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
40
10
Luminance E
0
Relative I
I
LEAK
20
I
CC
60
100
– E
– Ta
V CC = 3 V
Ev= 100 lx
Using fluorescent light
L
40
Ta = 25°C
V CC = 3 V
V
V
– Ta
(lx)
60
1000
80
R L = 1 kΩ
R L = 5 kΩ
R L = 25 kΩ
80
(typ)
2008-05-13
(typ)
(typ)
TPS859
10000
100
100