tps859 TOSHIBA Semiconductor CORPORATION, tps859 Datasheet - Page 2

• Manufacturer Part Number: tps859
• Description: Toshiba Photo Ic Silicon Epitaxial Planar
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Operation range
Electrical and Optical Characteristics
Supply voltage
Operating temperature
Supply voltage
Supply current
Light current (1)
Light current (2)
Light current (3)
Light current ratio
Dark current
Saturation output voltage
Switching time
Note 2: CIE standard A light source is used (color temperature = 2856K, approximated incandescence light).
Note 3: F10 of fluorescence light is used as light source. (color temperature = 5000K)
Note 4: Light current measurement circuit
Note 5: Supply current measurement circuit
Characteristics
However, white LED is substituted in a mass-production process.
Characteristics
Rise time
Fall time
Delay time
Storage time
source
Light
source
Light
E
V
E
V
I
L
(3)
Symbol
L I
I
L I
I
CC
I
I
Symbol
V
LEAK
TPS859
L
L
V
t
CC
t
V
T
t
t
(1)
(2)
(1)
d
s
(3)
O
r
f
TPS859
(1)
CC
opr
A rank
⎯
V
CC
V
R
V
V
V
V
V
V
I
(Ta = 25°C)
CC
CC
CC
CC
CC
CC
CC
L
L
Min
A
1.8
-30
= 1 kΩ
I
CC
A
= 3 V, E
= 3 V, E
= 3 V, E
= 3 V, E
= 3 V, E
= 3 V, R
= 3 V, R
2
R
L
Typ.
⎯
⎯
Test Condition
V
V
V
V
V
V
L
L
CC
= 1000 lx
= 100 lx
= 10 lx
= 100 lx
= 0
= 75 k Ω , E
= 5 k Ω , V
OUT
OUT
⎯
⎯
Max
5.5
85
(Note 2), (Note 4)
(Note 3), (Note 4)
(Note 3), (Note 4)
(Note 2) (Note 5)
OUT
V
= 100 lx
Unit
°C
= 1.5 V
V
(Note 3)
(Note 6)
160
180
Min
1.8
2.2
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2300
Typ.
2.35
230
230
230
150
300
180
1.0
⎯
23
⎯
8
2008-05-13
Max
320
300
5.5
0.2
2.6
32
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPS859
Unit
μA
μA
μA
μA
μ A
⎯
μ s
V
V