tps859 TOSHIBA Semiconductor CORPORATION, tps859 Datasheet - Page 12
tps859
Manufacturer Part Number
tps859
Description
Toshiba Photo Ic Silicon Epitaxial Planar
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPS859.pdf
(13 pages)
1000
0.001
0.01
100
0.1
10
100
0.1
10
80
60
40
20
1
1
200
0.1
0
1
Ta = 25°C
Ta = 25°C
V CC = 3 V
V OUT = 1.5 V
Using white LED
400
t d
t f
t r
t s
Load resistance R
Switching Characteristics
(Non-saturating operation)
10
Luminance E
Spectral Response
Wavelength
600
V
OUT
100
1
– E
800
Ta = 25°C
V CC = 3 V
V
V
L
(nm)
(lx)
(k Ω )
1000
1000
R L = 1 kΩ
R L = 5 kΩ
R L = 25 kΩ
(typ.)
(typ.)
(typ)
10000
1200
10
12
80°
90°
0.01
100
70°
10
0.1
Luminosity
angle
1
60°
0.1
50°
Ta = 25°C
V CC = 3 V
V OUT > 2.3 V
Using white LED
40°
30°
td
t f
t s
t r
Load resistance R
Switching Characteristics
20°
(Saturating operation)
Radiation pattern
10°
0°
0
1
10°
0.2
L
20°
0.4
(k Ω )
30°
Ta = 25°C
0.6
40°
(typ.)
(typ)
2008-05-13
0.8
50°
TPS859
60°
10
1.0
70°
80°
90
°