mc9s08jm60 Freescale Semiconductor, Inc, mc9s08jm60 Datasheet - Page 367

• Manufacturer Part Number: mc9s08jm60
• Description: Hcs08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations.
Freescale Semiconductor
1
Num
Typical values are based on characterization data at V
10
1
2
3
4
5
6
7
8
9
(CPOL = 0)
(CPOL = 1)
(OUTPUT)
(INPUT)
C
C
(INPUT)
(INPUT)
(INPUT)
NOTE:
MISO
MOSI
SCK
SCK
1. Not defined but normally LSB of character just received
SS
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
NOTE
= –40°C to + 85°C
SEE
Characteristic
8
5
3
(2)
Figure A-13. SPI Slave Timing (CPHA = 1)
2
SLAVE
4
5
6
MC9S08JM60 Series Data Sheet, Rev. 2
10
Table A-16. Flash Characteristics
MSB IN
2
1
4
MSB OUT
7
5
(2)
4
(2)
DD
V
= 5.0 V, 25°C unless otherwise stated.
11
BIT 6 . . . 1
Symbol
prog/erase
BIT 6 . . . 1
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
15
—
5
SLAVE LSB OUT
3
20,000
Appendix A Electrical Characteristics
4000
100,000
Typ
9
4
100
LSB IN
—
1
Max
6.67
200
5.5
5.5
—
—
—
9
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.
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