km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 24

• Manufacturer Part Number: km4132g271b
• Description: 128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM4132G271B
10. Clock Suspend Exit & Power Down Exit
11. Auto Refresh & Self Refresh
*Note : 1. Active power down : one or more bank active state.
2. Precharge power down : both bank precharge state.
3. The auto refresh is the same as CBR refresh of conventional DRAM.
4. Before executing auto/self refresh command, both banks must be idle state.
5. (S)MRS, Bank Active, Auto/Self Refresh, Power Down Mode Entry.
6. During self refresh mode, refresh interval and refresh operation are perfomed internally.
1) Clock Suspend (=Active Power Down) Exit
1) Auto Refresh
2) Self Refresh
During tRC from auto refresh command, any other command can not be accepted.
During self refresh mode, all inputs expect CKE will be don t cared, and outputs will be in Hi-Z state.
During tRC from self refresh exit command, any other command can not be accepted.
Before/After self refresh mode, burst auto refresh cycle (1K cycles) is recommended.
Internal
No precharge commands are required after Auto Refresh command.
After self refresh entry, self refresh mode is kept while CKE is LOW.
CMD
CMD
CMD
CKE
CLK
CLK
CLK
CKE
CLK
CKE
Note 6
Note 3
Note 1
PRE
PRE
Note 4
Note 4
t
t
RP
RP
SR
AR
t
SS
RD
¡ ó
t
¡ ó
RC
- 24
¡ ó
¡ ó
¡ ó
¡ ó
2) Power Down (=Precharge Power Down) Exit
Internal
¡ ó
¡ ó
¡ ó
¡ ó
CMD
CMD
CKE
CLK
CLK
t
RC
Note 5
Note 2
CMD
NOP
t
Rev. 2.4 (May 1998)
CMOS SGRAM
SS
ACT