km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 39

• Manufacturer Part Number: km4132g271b
• Description: 128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

KM4132G271B
CLOCK
Read & Write Cycle with Auto Precharge II @Burst Length=4
ADDR
(CL=3)
(CL=2)
DQM
DSF
CKE
RAS
CAS
DQ
DQ
WE
CS
A9
A8
*Note:
0
Row Active
(A-Bank)
Ra
Ra
1
1. When Read(Write) command with auto precharge is issued at A-Bank after A and B Bank activation.
- if Read(Write) command without auto precharge is issued at B-Bank before A Bank auto precharge starts, A Bank
- any command can not be issued at A Bank during tRP after A Bank auto precharge starts.
auto precharge will start at B Bank read command input point .
2
3
Row Active
(B-Bank)
Rb
Rb
4
Read with
Auto Pre
(A-Bank)
charge
Ca
5
6
precharge(B-Bank)
Read without Auto
Auto Precharge
Qa0
Cb
Start Point
(A-Bank)
7
Qa1
Qa0
8
*Note 1
- 39
Qb0
Qa1
9
HIGH
Qb1
Qb0
10
Precharge
(B-Bank)
Qb2
Qb1
11
Qb3
Qb2
12
Qb3
13
14
Row Active
(A-Bank)
Ra
Ra
15
Rev. 2.4 (May 1998)
CMOS SGRAM
16
17
Auto Precharge
18
Write with
(A-Bank)
: Don t care
Da0
Ca
Da0
19
Da1
Da1