km4132g271b Samsung Semiconductor, Inc., km4132g271b Datasheet - Page 6

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km4132g271b

Manufacturer Part Number
km4132g271b
Description
128k X 32bit X 2 Banks Synchronous Graphic Ram Lvttl
Manufacturer
Samsung Semiconductor, Inc.
Datasheet

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KM4132G271B
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
Recommended decoupling capacitance added to power line at board.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
Note :
DECOUPLING CAPACITANCE GUIDE LINE
Note :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance
(CLK, CKE, CS, RAS, CAS, WE, DSF & DQM)
Data input/output capacitance (DQ
Decoupling Capacitance between V
Decoupling Capacitance between V
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Output Loading Condition
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. Any input 0V
3. Dout is disabled, 0V
1. V
2. V
All V
All V
IL
DD
SS
Parameter
Parameter
(min) = -1.5V AC(pulse width 5ns).
DD
and V
and V
DD
SS
Parameter
supply relative to Vss
pins are connected in chip. All V
pins are connected in chip. All V
SSQ
Parameter
DDQ
0
(V
~ A
pins are separated each other
pins are separated each other.
V
DD
IN
9
)
/V
DDQ
V
DD
V
OUT
= 3.3V, T
+ 0.3V, all other pins are not under test = 0V.
0
DD
DDQ
~ DQ
V
V
and V
Symbol
DD
DD.
and V
V
V
31
V
V
I
, V
I
OL
A
OH
OL
IL
IH
IL
)
= 25 C, f = 1MHz)
SS
DDQ
(Voltage referenced to V
SSQ
DDQ
SSQ
pins are connected in chip.
V
pins are connected in chip.
V
Symbol
DD
IN
T
, V
I
, V
P
Symbol
STG
Min
-0.3
OS
3.0
2.0
2.4
-5
-5
D
C
-
C
C
OUT
DDQ
SS
OUT
IN1
IN2
= 0V)
- 6 -
SS
)
Typ
3.3
3.0
Symbol
0
-
-
-
-
C
C
DC1
DC2
see figure 1
Min
-
-
-
V
-55 ~ +150
-1.0 ~ 4.6
-1.0 ~ 4.6
DD
Max
3.6
0.8
0.4
Value
5
5
-
+0.3
50
1
0.1 + 0.01
0.1 + 0.01
Value
Max
4
4
5
Unit
uA
uA
V
V
V
V
V
Rev. 2.4 (May 1998)
CMOS SGRAM
I
I
OH
Unit
OL
mA
W
Unit
Note 1
Note 2
Note 3
V
V
C
Note
Unit
uF
uF
= -2mA
pF
pF
pF
= 2mA

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