ssm6p49nu TOSHIBA Semiconductor CORPORATION, ssm6p49nu Datasheet
ssm6p49nu
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ssm6p49nu Summary of contents
Page 1
... GSS −4 −16.0 I (Note < 10s 2 °C T 150 ch −55 to 125 °C T stg 2 ) Equivalent Circuit(Top View SSM6P49NU Unit: mm 2.0 0.1 ± 0～0.05 0.13 *BOTTOM VIEW 0.65 0.65 0. 0.3 0.075 ± 0. 0.65 0.075 0.65 0.075 ± ± 0. ...
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... V DD Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I th SSM6P49NU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
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... Gate–source voltage V 200 Common Source Ta = 25°C Pulse Test 160 120 80 40 - ° -2.0 -10 -12 -1.0 -0.5 0 −50 150 Ambient temperature Ta (°C) 3 SSM6P49NU I – - °C -1 -2.5 -1 – (ON) D -1.8 V -2 -10 V -10.0 -4.0 -6.0 -8.0 Drain current I (A) ...
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... G 1 0.1 0.01 0 -100 10000 t off C iss t f 1000 100 -100 -0.001 ( SSM6P49NU I – 100 °C 25 °C -25 °C 0.5 1.0 1.5 Drain–source voltage V ( – Common Source - -2 ° 4.7Ω ...
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... Cu Pad : 645 mm b: Mounted on FR4 board 1200 (25.4mm × 25.4mm × 1.6mm , Cu Pad : 2.13mm 1000 a a 800 600 400 b 2 200 ) 100 1000 -40 -20 0 Ambient temperature Ta (°C) 5 SSM6P49NU P – 100 120 140 160 2010-11-18 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6P49NU 2010-11-18 ...