ssm6p49nu TOSHIBA Semiconductor CORPORATION, ssm6p49nu Datasheet - Page 2

• Manufacturer Part Number: ssm6p49nu
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Notice on Usage
SSM6P49NU). Then, for normal switching operation, V
V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
and pad area. When using this device, please take heat dissipation into consideration
th.
Let V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
Thermal resistance R
−2.5 V
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Switching time
Drain-Source forward voltage
Note 3: Pulse measurement
Note 4: If a forward bias is applied between gate and source, this device enters V(
(a) Test circuit
This relationship can be expressed as: V
th
0
be the voltage applied between gate and source that causes the drain current (I
10 μs
Note that the drain-source breakdown voltage is lowered in this mode.
Characteristic
IN
Turn-on time
Turn-off time
th (ch-a)
and power dissipation P
V
DD
(Ta = 25°C) (Q1, Q2 Common)
OUT
V
V
R
Symbol
(BR) DSS
(BR) DSX
⏐Y
DS (ON)
V
Q
I
I
C
C
C
Q
DSS
GSS
V
Q
t
t
DSF
V
R
Duty < = 1%
V
Common source
Ta = 25°C
oss
gs1
on
off
iss
rss
GS(off)
th
gd
fs
DD
IN
g
G
⏐
: t
= 4.7 Ω
= −10 V
r
, t
f
< V
< 5 ns
I
I
V
V
V
V
I
I
I
I
V
V
V
V
V
I
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
DD
GS
= -1 mA, V
= -1 mA, V
= -3.5 A, V
= -3.0 A, V
= -2.0 A, V
= -0.5 A, V
=4.0A, V
GS(on)
th
D
= -20 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= ±10 V, V
= −10 V, I
= −4.5 V
= -10 V, I
= 0 to -2.5 V, R
< V
vary depending on board material, board area, board thickness
2
GS(on)
GS
must be higher than V
Test Conditions
D
D
(b) V
(c) V
GS
GS
GS
GS
GS
GS
D
D
GS
= -1 mA
= -2.0 A
GS
= 0 V
DS
= -0.5 A,
= 0 V
= 8 V
= -10 V
= -4.5 V
= -2.5 V
= -1.8 V
= −4.0A
.
= 0 V
= 0 V, f = 1 MHz
= 0 V
OUT
IN
G
= 4.7Ω
0 V
−2.5 V
V
V
(Note 4)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
(Note 3)
DS (ON)
DD
th,
BR)DSX
and V
-0.5
Min
-20
-12
4.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
D
t
90%
on
GS(off)
) to be low (-1 mA for the
mode.
Typ.
6.74
0.95
1.50
0.87
t
480
9.5
r
36
44
60
83
90
76
21
54
⎯
⎯
⎯
⎯
⎯
10%
90%
SSM6P49NU
must be lower than
2010-11-18
Max
-1.2
157
1.2
10%
t
±1
45
56
76
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-1
off
t
f
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
V