ssm6p49nu TOSHIBA Semiconductor CORPORATION, ssm6p49nu Datasheet - Page 3

• Manufacturer Part Number: ssm6p49nu
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

200
150
100
150
100
-10
50
50
-8
-6
-2
-4
0
0
0
−50
0
0
Common Source
Pulse Test
-0.5 A / -1.8 V
Gate–source voltage V
Drain–source voltage V
-2
Ambient temperature Ta (°C)
-0.2
-10 V
0
R
-2.0 A / -2.5 V
-4
DS (ON)
R
-0.4
DS (ON)
I
D
– V
50
-4.5 V
-6
– V
DS
I D = -3.5 A / V GS = -10 V
-0.6
– Ta
25 °C
GS
-3.0 A / -4.5 V
-8
Common Source
Ta = 25 °C
Pulse Test
GS
I D =-2.0A
Common Source
Pulse test
DS
100
-2.5 V
V GS = -1.8 V
-0.8
Ta = 100 °C
(V)
(V)
-10
- 2 5 °C
150
-12
-1
3
-0.0001
-0.001
-0.01
-100
200
160
120
-0.1
-1.0
-0.5
40
-10
80
-1
0
0
−50
0
0
Common Source
Ta = 25°C
Pulse Test
25 °C
Common Source
V DS = -3 V
Pulse test
Ta = 100 °C
Gate–source voltage V
Ambient temperature Ta (°C)
-2.0
-0.5
Drain current I
0
R
-4.0
DS (ON)
I
-1
D
- 2 5 °C
V
– V
th
50
– Ta
GS
– I
-1.8 V
-6.0
-1.5
D
D
SSM6P49NU
(A)
GS
Common Source
V DS = -3 V
I D = -1 mA
100
V GS = -10 V
-8.0
2010-11-18
-2
(V)
-2.5 V
-4.5 V
-10.0
150
-2.5