s71gs256nc0bawak0 Meet Spansion Inc., s71gs256nc0bawak0 Datasheet - Page 17

• Manufacturer Part Number: s71gs256nc0bawak0
• Description: Stacked Multi-chip Product Mcp 256/128 Megabit 16/8m X 16-bit Cmos 3.0 Volt Vcc And 1.8 V Vio Mirrorbit Tm Uniform Sector Page-mode Flash Memory With 64/32 Megabit 4/2m X 16-bit 1.8v Psram
• Manufacturer: Meet Spansion Inc.

General Description
December 15, 2004 S29GLxxxN_MCP_A1
The S29GL512/256/128N family of devices are 3.0V single power flash memory
manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit,
organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256
Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a
128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The device can be
programmed either in the host system or in standard EPROM programmers.
Access times as fast as 90 ns (S29GL128N, S29GL256N, S29GL512N) are avail-
able. Note that each access time has a specific operating voltage range (V
an I/ O voltage range (V
The devices are offered in a 56-pin TSOP or 64-ball Fortified BGA package. Each
device has separate chip enable (CE# ), write enable (WE# ) and output enable
(OE# ) controls.
Each device requires only a single 3.0 volt power supply for both read and
write functions. In addition to a V
(WP# / ACC) input provides shorter programming times through increased cur-
rent. This feature is intended to facilitate factory throughput during system
production, but may also be used in the field if desired.
The devices are entirely command set compatible with the JEDEC single-
power-supply Flash standard. Commands are written to the device using
standard microprocessor write timing. Write cycles also internally latch addresses
and data needed for the programming and erase operations.
The sector erase architecture allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Device programming and erasure are initiated through command sequences.
Once a program or erase operation has begun, the host system need only poll the
DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy#
(RY/BY#) output to determine whether the operation is complete. To facilitate
programming, an Unlock Bypass mode reduces command sequence overhead
by requiring only two write cycles to program data instead of four.
The Enhanced VersatileI/O™ (V
voltage levels that the device generates and tolerates on all input levels (address,
chip control, and DQ input levels) to the same voltage level that is asserted on
the V
ment as required.
Hardware data protection measures include a low V
ically inhibits write operations during power transitions. Persistent Sector
Protection provides in-system, command-enabled protection of any combina-
tion of sectors using a single power supply at V
prevents unauthorized write and erase operations in any combination of sectors
through a user-defined 64-bit password.
The Erase Suspend/Erase Resume feature allows the host system to pause an
erase operation in a given sector to read or program any other sector and then
complete the erase operation. The Program Suspend/Program Resume fea-
ture enables the host system to pause a program operation in a given sector to
read any other sector and then complete the program operation.
The hardware RESET# pin terminates any operation in progress and resets the
device, after which it is then ready for a new operation. The RESET# pin may be
IO
pin. This allows the device to operate in a 1.8 V or 3 V system environ-
A d v a n c e
IO
S29GLxxxN MirrorBit
), as specified in the
I n f o r m a t i o n
CC
IO
input, a high-voltage accelerated program
) control allows the host system to set the
TM
Flash Family
CC
“Product Selector Guide”
. Password Sector Protection
CC
detector that automat-
section.
CC
) and
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