am42bds640ag Meet Spansion Inc., am42bds640ag Datasheet - Page 18

• Manufacturer Part Number: am42bds640ag
• Description: 64 Megabit 4 M ? 16-bit Cmos 1.8 Volt-only, Simultaneous Operation, Burst Mode Flash Memory And 16 Mbit 1 M ? 16-bit Static Ram Preliminary
• Manufacturer: Meet Spansion Inc.

November 1, 2002
Addresses
Addresses
1Ah
1Bh
1Ch
1Dh
1Eh
1Fh
2Ah
2Bh
2Ch
2Dh
2Eh
2Fh
3Ah
3Bh
3Ch
19h
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
007Dh
0000h
0000h
0017h
0019h
0000h
0000h
0004h
0000h
0009h
0000h
0004h
0000h
0004h
0000h
0017h
0001h
0000h
0000h
0000h
0003h
0003h
0000h
0040h
0000h
0000h
0000h
0001h
0003h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Data
Data
Table 5. Device Geometry Definition
Address for Alternate OEM Extended Table (00h = none exists)
V
D7–D4: volt, D3–D0: 100 millivolt
V
D7–D4: volt, D3–D0: 100 millivolt
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
Flash Device Interface description (refer to CFI publication 100)
Max. number of bytes in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Erase Block Region 2 Information
Erase Block Region 3 Information
Erase Block Region 4 Information
Table 4. System Interface String
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase)
Max. (write/erase)
P R E L I M I N A R Y
Am42BDS640AG
N
byte
PP
PP
N
times typical
pin present)
pin present)
N
N
times typical (00h = not supported)
N
Description
Description
times typical
ms (00h = not supported)
N
N
times typical
N
N
µ
N
s (00h = not supported)
µs
ms
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