thncf032mbai TOSHIBA Semiconductor CORPORATION, thncf032mbai Datasheet - Page 33
thncf032mbai
Manufacturer Part Number
thncf032mbai
Description
Thncfxxxmba/bai Series Compactflash Card Flash Technology Based With Interface Flash Memory Card.
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.THNCF032MBAI.pdf
(48 pages)
- Current page: 33 of 48
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Card System performance
ELECTRICAL SPECIFICATION
Set up times (Reset to Ready)
Set up times (Sleep to Idle)
Set up times (Deep Power Down to Idle)
Data transfer rate to / from host
Sustained read transfer rate
Sustained write transfer rate
Sustained write transfer rate
Controller overhead (Command to DRQ)
Data transfer cycle end to ready (Sector write)
Notes:
V
V
V
T
T
Notes:
SYMBOL
opr
stg
IN
CC
CC
1. This parameter will be changed for different capacity and NAND type flash memory, the typical set up time for 2 Giga Bytes
2. The actual transfer rate is measured under ATA PIO mode 4 with single cycle time as 120ns.
1. THNCFxxxMBA Series (Commercial grade)
2. THNCFxxxMBAI Series (Industrial grade)
, V
OUT
flash card is 325ms
All input / output voltage
Power Supply Voltage
(Absolute Maximum Ratings)
Power Supply Voltage
(Recommended Operation Condition)
Operating Temperature
Storage Temperature
PARAMETER
ITEM
Preliminary
−0.3
−0.6
−20
MIN
−40
−45
4.5
3.0
0
V
CC
MAX
3.2 M byte / s (max.) <64MB~512MB>, actually *2
6.0
5.5
3.6
70
85
85
90
1.5 M byte / s (max.) <8MB~48MB>, actually *2
+ 0.3
16.6 M byte / s burst (max.), theoretically
6.5 M byte / s (max.), actually *2
TYP
500µs (typ.), 50ms (max.)
5.0
3.3
THNCFxxxMBA/BAI Series
25
400 ms (max.) *1
Performance
100µs (max.)
4 ms (max.)
4 ms (max.)
UNIT
°C
°C
°C
°C
V
V
V
V
2002-10-20 33/48
Commercial grade *1
Commercial grade *1
Industrial grade *2
Industrial grade *2
NOTES
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