thncf032mbai TOSHIBA Semiconductor CORPORATION, thncf032mbai Datasheet - Page 33

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thncf032mbai

Manufacturer Part Number
thncf032mbai
Description
Thncfxxxmba/bai Series Compactflash Card Flash Technology Based With Interface Flash Memory Card.
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Card System performance
ELECTRICAL SPECIFICATION
Set up times (Reset to Ready)
Set up times (Sleep to Idle)
Set up times (Deep Power Down to Idle)
Data transfer rate to / from host
Sustained read transfer rate
Sustained write transfer rate
Sustained write transfer rate
Controller overhead (Command to DRQ)
Data transfer cycle end to ready (Sector write)
Notes:
V
V
V
T
T
Notes:
SYMBOL
opr
stg
IN
CC
CC
1. This parameter will be changed for different capacity and NAND type flash memory, the typical set up time for 2 Giga Bytes
2. The actual transfer rate is measured under ATA PIO mode 4 with single cycle time as 120ns.
1. THNCFxxxMBA Series (Commercial grade)
2. THNCFxxxMBAI Series (Industrial grade)
, V
OUT
flash card is 325ms
All input / output voltage
Power Supply Voltage
(Absolute Maximum Ratings)
Power Supply Voltage
(Recommended Operation Condition)
Operating Temperature
Storage Temperature
PARAMETER
ITEM
Preliminary
−0.3
−0.6
−20
MIN
−40
−45
4.5
3.0
0
V
CC
MAX
3.2 M byte / s (max.) <64MB~512MB>, actually *2
6.0
5.5
3.6
70
85
85
90
1.5 M byte / s (max.) <8MB~48MB>, actually *2
+ 0.3
16.6 M byte / s burst (max.), theoretically
6.5 M byte / s (max.), actually *2
TYP
500µs (typ.), 50ms (max.)
5.0
3.3
THNCFxxxMBA/BAI Series
25
400 ms (max.) *1
Performance
100µs (max.)
4 ms (max.)
4 ms (max.)
UNIT
°C
°C
°C
°C
V
V
V
V
2002-10-20 33/48
Commercial grade *1
Commercial grade *1
Industrial grade *2
Industrial grade *2
NOTES

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