mt8lsdt1664hy-13e Micron Semiconductor Products, mt8lsdt1664hy-13e Datasheet - Page 11

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mt8lsdt1664hy-13e

Manufacturer Part Number
mt8lsdt1664hy-13e
Description
64mb, 128mb, 256mb X64, Dr 144-pin Sdram Sodimm
Manufacturer
Micron Semiconductor Products
Datasheet
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1, 5, 6; notes appear on page 15; V
Table 11: I
Notes: 1, 1, 5, 6, 11, 13; notes appear on page 15; V
NOTE:
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
PARAMETER/CONDITION
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
=
STANDBY CURRENT: Power-Down Mode; All device device banks
idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; S# = HIGH
SELF REFRESH CURRENT: CKE
(Low power not available with industrial
temperature option)
b. Value calculated reflects all module ranks in this operating condition.
a. Value calculated as one module rank in this operating condition, and all other module ranks in power-down mode.
t
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs, NC or I/O Pins
RC (MIN)
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
Relative to Vss . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
V
V
DD
OUT
DD
IN
Supply
Specifications and Conditions – 64MB
V
V
OUT
DD
OUT
DD
t
Q
RCD met; No accesses in progress
= 4mA)
= -4mA)
0.2V
DD
, V
DD
t
t
RFC =
RFC = 15.625µs
Q = +3.3V ±0.3V
Low Power (L)
Command and
Address Inputs
CK, S#
DQMB
DQ
DD
Standard
, V
t
RFC (MIN)
DD
Q = +3.3V ±0.3V; DRAM components only
11
t
RC
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
64MB, 128MB, 256MB (x64, DR)
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
SYMBOL
V
SYMBOL
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DD
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
OPR
OPR
V
V
V
, V
I
V
OZ
2
5
6
7
7
OH
1
3
4
I
OL
IH
IL
I
a
b
a
a
b
b
b
b
DD
(Commercial - ambient) . . . . . . 0°C to +65°C
(Industrial - ambient) . . . . . . . -40°C to +85°C
144-PIN SDRAM SODIMM
Q
1,840
-13E
508
188
608
MIN
16
24
-0.3
-40
-20
2.4
8
4
-5
-5
3
2
MAX
V
1,680 1,520
-133
468
188
568
16
24
DD
MAX
8
4
3.6
0.8
0.4
40
20
5
5
+ 0.3
©2004 Micron Technology, Inc. All rights reserved.
-10E
388
148
488
16
24
8
4
UNITS
µA
µA
µA
µA
V
V
V
V
V
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
NOTES
3, 18, 19,
3, 12, 19,
3, 18, 19,
3, 12, 18,
19, 29,30
NOTES
22
22
33
33
29
29
29
29
4

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