mt8lsdt1664hy-13e Micron Semiconductor Products, mt8lsdt1664hy-13e Datasheet - Page 7

• Manufacturer Part Number: mt8lsdt1664hy-13e
• Description: 64mb, 128mb, 256mb X64, Dr 144-pin Sdram Sodimm
• Manufacturer: Micron Semiconductor Products

M3 specifies the type of burst (sequential or inter-
leaved), M4–M6 specify the CAS latency, M7 and M8
specify the operating mode, M9 specifies the write
burst mode, and M10 and M11 are reserved for future
use. For 64MB and 128MB, Address A12 (M12) is unde-
fined but should be driven LOW during loading of the
mode register.
banks are idle, and the controller must wait the speci-
fied time before initiating the subsequent operation.
Violating either of these requirements will result in
unspecified operation.
Burst Length
ented, with the burst length being programmable, as
shown in Figure 4, Mode Register Definition Diagram.
The burst length determines the maximum number of
column locations that can be accessed for a given
READ or WRITE command. Burst lengths of 1, 2, 4, or 8
locations are available for both the sequential and the
interleaved burst types, and a full-page burst is avail-
able for the sequential type. The full-page burst is
used in conjunction with the BURST TERMINATE
command to generate arbitrary burst lengths.
operation or incompatibility with future versions may
result.
of columns equal to the burst length is effectively
selected. All accesses for that burst take place within
this block, meaning that the burst will wrap within the
block if a boundary is reached, as shown in Table 7,
Burst Definition Table, on page 8.
uniquely selected by A1–Ai when the burst length is set
to two; by A2–Ai when the burst length is set to four;
and by A3–Ai when the burst length is set to eight. See
Note 8 of Table 7, Burst Definition Table, on page 8 for
Ai values. The remaining (least significant) address
bit(s) is (are) used to select the starting location within
the block. Full-page bursts wrap within the page if the
boundary is reached, as shown in Table 7, Burst Defini-
tion Table, on page 8.
Burst Type
to be either sequential or interleaved; this is referred to
as the burst type and is selected via bit M3.
09005aef8077d63a
SD8C8_16_32x64HG.fm - Rev. C 6/04 EN
Mode register bits M0–M2 specify the burst length,
The mode register must be loaded when all device
Read and write accesses to the SDRAM are burst ori-
Reserved states should not be used, as unknown
When a READ or WRITE command is issued, a block
Accesses within a given burst may be programmed
The block is
7
mined by the burst length, the burst type and the start-
ing column address, as shown in Table 7, Burst
Definition Table, on page 8.
256MB Module
64MB Module and
64MB, 128MB, 256MB (x64, DR)
The ordering of accesses within a burst is deter-
Figure 4: Mode Register Definition
M12, M11, M10 = “0, 0, 0”
Micron Technology, Inc., reserves the right to change products or specifications without notice.
to ensure compatibility
with future devices.
*Should program
to ensure compatibility
M11 and M10 = “0, 0”
with future devices.
*Should program
12
A12
Reserved*
144-PIN SDRAM SODIMM
Reserved* WB
11
11
A11
A11
10
10
A10
A10
WB
M9
0
1
9
9
128MB Module
A9
A9
Op Mode
Op Mode
8
8
Diagram
A8
A8
7
7
A7
A7
Programmed Burst Length
M8
0
Single Location Access
-
CAS Latency
CAS Latency
6
6
Write Burst Mode
A6
A6
5
5
M7
©2004 Micron Technology, Inc. All rights reserved.
A5
A5
0
-
4
4
A4
A4
M3
BT
BT
M6-M0
Defined
0
1
3
3
A3
A3
-
M2
M6
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
Burst Length
Burst Length
2
2
M1
A2
A2
M5
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
M0
M4
1
1
0
1
0
1
0
1
0
1
Operating Mode
Standard Operation
All other states reserved
0
1
0
1
0
1
0
1
A1
A1
0
0
A0
A0
Full Page
Reserved
Reserved
Reserved
M3 = 0
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Mx)
Mode Register (Mx)
Address Bus
Address Bus
Burst Length
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
2
3
Reserved
Reserved
Reserved
Reserved
M3 = 1
1
2
4
8