mt18vddt12872ag-335 Micron Semiconductor Products, mt18vddt12872ag-335 Datasheet - Page 31

• Manufacturer Part Number: mt18vddt12872ag-335
• Description: 256mb, 512mb, 1gb, 2gb X72, Ecc, Dr 184-pin Ddr Sdram Udimm
• Manufacturer: Micron Semiconductor Products

Table 23: Serial Presence-Detect Matrix (2GB)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 32
pdf: 09005aef80814e61, source: 09005aef807f8acb
DD18C32_64_128_256x72AG.fm - Rev. B 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
CAS Latency = 2.5 (see note 1)
SDRAM Access from Clock,
CAS Latency = 2.5
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary DDR SDRAM)
Error-checking DDR SDRAM Data Width
Minimum Clock Delay, Back-to-Back Random Column
Access
Burst Lengths Supported
Number of Banks on DDR SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
(CAS Latency = 2)
SDRAM Access from CK,
(CAS Latency = 2)
SDRAM Cycle Time,
(CAS Latency = 1.5)
SDRAM Access from CK,
(CAS Latency = 1.5)
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
DESCRIPTION
t
t
t
CK,
CK,
CK,
t
t
AC,
AC
t
AC,
t
RAS (see note 2)
t
RCD (see note 4)
t
RP (see note 4)
t
RRD
256MB, 512MB, 1GB, 2GB (x72, ECC, DR)
31
15ns (-262/-26A/-265/-202)
128MB, 256MB, 512MB
Unbuffered/Diff. Clock
0.75ns (-262/-26A/-265)
0.75ns (-262-26A/-265)
45ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
ENTRY (VERSION)
Fast/Concurrent AP
15.62µs, 7.8µs/SELF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
20ns (-26A/-265)
20ns (-26A/-265)
184-PIN DDR SDRAM UDIMM
7ns (-262/-26A)
SDRAM DDR
7.5ns (-265)
0.7ns (-335)
0.7ns (-335)
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
15ns (-262)
42ns (-335)
SSTL 2.5V
6ns (-335)
1 clock
2, 4, 8
12,13
10,11
2, 2.5
128
256
ECC
N/A
N/A
72
2
0
8
8
4
0
1
©2004 Micron Technology, Inc. All rights reserved.
MT18VDDT25672A
A0
2A
2D
80
08
07
0E
0B
02
48
00
04
60
70
75
70
75
02
82
08
08
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
3C
50
01