tpcp8004 TOSHIBA Semiconductor CORPORATION, tpcp8004 Datasheet
tpcp8004
Related parts for tpcp8004
tpcp8004 Summary of contents
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... GSS 0.021 150 °C ch −55 to 150 °C T stg 1 TPCP8004 Unit: mm 0.33 ± 0.05 0. 0.475 0. 0.65 2.9 ± 0.1 A 0.8 ± 0.05 0.025 S S ＋0.1 0.17 ± 0.02 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.11 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8： ...
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... Year of manufacture (The last digit of the year) Symbol Max Unit R 74.4 °C/W th (ch-a) (Note 2a) R 148.8 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCP8004 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2008-12-18 ...
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... Duty ≤ 1 ≈ =8 gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 8 DSF TPCP8004 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ ⎯ − ⎯ 10 ⎯ 1.3 2.5 = 4.2A ⎯ 10 4.2A ⎯ ...
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... Drain-source voltage V 0.4 0.3 0.2 0 Gate−source voltage V 100 Common source Ta = 25°C Pulse test 10 1 100 0.1 4 TPCP8004 I – 3.5 3.3 5 Common source 25°C Pulse test 3.2 3.1 3.0 2.9 2 2.7 V 0.8 1.2 1 – Common source Ta = 25°C Pulse test ...
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... Common source 0 1mA Pulse test 0 −80 −40 100 (V) Ambient temperature 160 0 C) ° 5 TPCP8004 I – 4 Common source Ta = 25°C Pulse test −0.4 −0.6 −0.8 −1 −1.2 ( – ...
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... I D max (Pulse Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain−source voltage V DS − 0.01 0 Pulse width t (s) w 100 (V) 6 TPCP8004 (2) (1) Single pulse 100 1000 2008-12-18 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8004 20070701-EN GENERAL 2008-12-18 ...