tpcp8004 TOSHIBA Semiconductor CORPORATION, tpcp8004 Datasheet - Page 3

• Manufacturer Part Number: tpcp8004
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
Q
I
I
C
V
|Y
C
C
I
Q
GSS
DSS
V
DRP
t
t
Q
DSF
on
off
oss
t
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
f = 1MHz
Duty ≤ 1%, t
V
I
I
D
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
V
= 10 mA, V
= 10 mA, V
=8.3 A
3
GS
= 8.3 A, V
(Ta = 25°C)
=10 V, V
≈ 24 V, V
=
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
10 V
0 V
±
20 V, V
Test Condition
Test Condition
w
GS
D
D
GS
D
GS
GS
D
GS
GS
= 10
⎯
DS
= 1mA
= 4.2A
= 4.2A
= 0 V
= 4.2A
=0 V,
= 0 V
=
=10 V,
= 0 V
I
V
= 0 V
D
−
μ
DD
20 V
s
= 4.2A
≈
15 V
V
OUT
Min
Min
1.3
30
10
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
1270
Typ.
10.5
240
380
3.8
21
12
23
35
26
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
9
8
TPCP8004
2008-12-18
±100
Max
Max
33.2
−1.2
2.5
8.5
10
14
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
V
V
S
A
V