tpcp8004 TOSHIBA Semiconductor CORPORATION, tpcp8004 Datasheet - Page 4

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tpcp8004

Manufacturer Part Number
tpcp8004
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
100
0.1
10
40
30
20
10
10
8
6
4
2
0
0
1
0.1
0
0
10
Common source
V DS = 10 V
Pulse test
4
Drain−source voltage V
Gate−source voltage V
1
3.5
0.2
Ta = −55°C
8
3.3
Drain current I
6
5
3.2
2
1
100
100
0.4
I
I
|Y
D
D
fs
– V
– V
| – I
3
25
DS
GS
D
0.6
Ta = −55°C
25
D
10
4
GS
(A)
DS
Common source
V DS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.7 V
0.8
(V)
(V)
5
3.1
3.0
2.9
2.8
100
1
6
4
100
0.4
0.3
0.2
0.1
20
16
12
10
8
4
0
0
1
0.1
0
0
10
Common source
Ta = 25°C
Pulse test
Drain-source voltage V
Gate−source voltage V
4
0.4
8
2
6
3.5
5
Drain current I
2.1
1
R
0.8
V
DS (ON)
4
I
DS
D
4.2
V GS = 10 V
– V
– V
4.5
DS
I D = 8.3 A
GS
– I
1.2
6
D
D
10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = 2.7 V
1.6
8
(V)
(V)
TPCP8004
2008-12-18
3.0
3.3
2.8
3.1
3.2
2.9
100
10
2

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