tpcp8001-h TOSHIBA Semiconductor CORPORATION, tpcp8001-h Datasheet

tpcp8001-h

Manufacturer Part Number

tpcp8001-h

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra High Speed U-mosiii

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPCP8001-H.pdf (7 pages)

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High Efficiency DC／DC Converter Applications

Notebook PC Applications

Portable Equipment Applications

•

Maximum Ratings

Small footprint due to a small and thin package

High speed switching

Small gate charge: Q

Low drain-source ON-resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single-pulse avalanche energy

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Note: For Notes 1 to 5, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with care.

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)

Characteristic

(Note 2a) (Note 4)

Pulsed (Note 1)

= 20 kΩ)

(Ta = 25°C)

DSS

= 3.6 nC (typ.)

(Note 2a)

(Note 2b)

= 1.1 to 2.3 V (V

(Note 1)

(Note 3)

(t = 5 s)

= 10 μA (max) (V

TPCP8001-H

DS (ON)

Symbol

DGR

GSS

DSS

| = 16 S (typ.)

stg

= 13 mΩ (typ.)

= 10 V, I

= 30V)

−55 to 150

Rating

0.066

28.8

1.68

0.84

33.6

±20

150

7.2

= 1 mA)

Unit

°C

Weight: 0.017 g (typ.)

Circuit Configuration

Marking

JEDEC

JEITA

TOSHIBA

1．Source

2．Source

3．Source

4．Gate

0.475

0.33±0.05

0.025

0.65

8001H

5．Drain

6．Drain

7．Drain

8．Drain

2.9±0.1

(Note 5)

0.17±0.02

0.05

TPCP8001-H

2-3V1K

2006-05-29

Lot No.

―

※

0.28

1.12

0.28

0.8±0.05

+0.13

+0.1

-0.11

0.05

-0.12

Unit: mm

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