tpcp8001-h TOSHIBA Semiconductor CORPORATION, tpcp8001-h Datasheet - Page 4

• Manufacturer Part Number: tpcp8001-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra High Speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
20
16
10
12
8
6
4
2
0
8
4
0
1
0.1
0
0
Common source
Common source
V DS = 10 V
V DS = 10 V
Pulse test
Pulse test
0.4
Drain-source voltage V
Gate-source voltage V
1
10
4
3.5
Drain current I
3.4
0.8
1
3.3
100°C
2
⎪Y
Ta = −55°C
I
I
D
D
fs
– V
1.2
– V
⎪ – I
DS
GS
100°C
D
3
Ta = −55°C
D
3.2
1.6
10
GS
25°C
DS
25°C
(A)
Common source
V GS = 2.8 V
Ta = 25°C
Pulse test
(V)
(V)
4
2
3.1
3.0
2.9
100
2.4
5
4
100
0.8
0.6
0.4
0.2
16
12
10
8
4
0
1
0
1
1
0
0
Common source
10
Ta = 25°C
Pulse test
Drain-source voltage V
Gate-source voltage V
0.4
4
5
2
Drain current I
V GS = 4.5 V
0.8
R
V
DS (ON)
I D = 7.2 A
4
I
DS
D
3.6
– V
1.2
10
– V
1.8
10
DS
GS
– I
6
D
3.5
D
1.6
GS
DS
(A)
Common source
Common source
TPCP8001-H
Ta = 25°C
Pulse test
Ta = 25°C
Pulse test
V GS = 2.8 V
8
(V)
(V)
2
2006-05-29
3.4
3.3
3.2
3.0
3.1
2.9
100
2.4
10