tpcp8001-h TOSHIBA Semiconductor CORPORATION, tpcp8001-h Datasheet - Page 2

• Manufacturer Part Number: tpcp8001-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra High Speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Thermal resistance, channel to ambient
(t = 5 s)
Thermal resistance, channel to ambient
(t = 5 s)
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ● on the lower left of the marking indicates Pin 1.
* Weekly code: (Three digits)
DD
= 24 V, T
Characteristic
(a)
ch
Week of manufacture
(01 for first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the calendar year)
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(Unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
G
2
= 25 Ω, I
148.8
74.4
Max
(b) Device mounted on a glass-epoxy board (b)
AR
°C/W
°C/W
Unit
= 7.2A
(b)
25.4 × 25.4 × 0.8
FR-4
(Unit: mm)
TPCP8001-H
2006-05-29