tpc8020-h TOSHIBA Semiconductor CORPORATION, tpc8020-h Datasheet

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tpc8020-h

Manufacturer Part Number
tpc8020-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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TPC8020-H
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High-Efficiency DC/DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Absolute Maximum Ratings
Small footprint due to a small and thin package
High-speed switching
Small gate charge: Q
Low drain-source ON- resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For Notes 1 to 4, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristic
(Note 2a) (Note 4)
GS
DC
Pulsed (Note 1)
SW
= 20 kΩ)
DSS
th
= 6.9 nC (typ.)
(Note 2a)
(Note 2b)
= 1.1 to 2.3 V (V
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= 10 μA (max) (V
(Ta = 25°C)
DS (ON)
TPC8020-H
Symbol
V
V
V
fs
E
E
T
I
I
T
P
P
DGR
GSS
DSS
I
DP
AR
| =32 S (typ.)
AS
AR
stg
D
ch
D
D
DS
= 6.8 mΩ (typ.)
DS
= 10 V, I
= 30 V)
−55 to 150
Rating
0.084
±20
110
150
1.9
1.0
D
30
30
13
52
13
1
= 1 mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.085 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
TPC8020-H
2-6J1B
6
3
2006-11-16
5
4
Unit: mm

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tpc8020-h Summary of contents

Page 1

... DGR ± GSS 1 1 110 0.084 150 °C ch −55 to 150 T °C stg 1 TPC8020-H Unit: mm JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 2006-11-16 ...

Page 2

... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 65.8 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPC8020-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( 2006-11-16 ...

Page 3

... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPC8020-H Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.1 2.3 ⎯ 9.5 13 ⎯ 6.8 ⎯ ...

Page 4

... Drain-source voltage V 0.2 0.16 0.12 0.08 0. Gate-source voltage V 100 Common source Ta = 25°C Pulse test 4 100 0.1 4 TPC8020-H I – Common source Ta = 25°C Pulse test 3.3 4 4.5 3 2.7V 1.2 1.6 2 0.8 ( – Common source °C Pulse test ...

Page 5

... Pulse test 0 −80 −40 100 (V) Ambient temperature Common source 25°C Pulse test 160 0 C) ° 5 TPC8020-H I – 4 25° Pulse test −0.4 −0.6 −0.8 −1.0 ( – 120 ...

Page 6

... Safe operating area 100 I D max (Pulse =1ms * 10 10ms * * Single - pulse 1 Ta=25℃ Curves must be derated linearly with increase in temperature. V DSS max 0.1 0 Drain-source voltage V ( – t – 0 Pulse width t (s) w 100 6 TPC8020-H (2) (1) Single - pulse 100 1000 2006-11-16 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPC8020-H 20070701-EN 2006-11-16 ...

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