tpc8020-h TOSHIBA Semiconductor CORPORATION, tpc8020-h Datasheet - Page 5

• Manufacturer Part Number: tpc8020-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
0.8
20
1.2
0.4
16
10
12
−80
8
4
0
0.1
2
0
0
Common source
ソース接地
V GS = 0 V
V
f = 1 MHz
f = 1 MHz
Ta = 25°C
Ta = 25°C
GS
Common source
Pulse test
V GS = 4.5 V
= 0 V
(1)
(2)
V GS = 10 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
0
1
R
DS (ON)
3.5A,6.5A
P
D
(1)Device mounted on a
(2)Device mounted on a
ｔ＝10s
I D = 3.5A,6.5A,13A
40
80
glass-epoxy board(a) (Note 2a)
glass-epoxy board(b) (Note 2b)
– Ta
– Ta
80
10
DS
DS
I D = 13A
C rss
C iss
C oss
120
°
(V)
C)
120
°
C)
160
100
160
5
100
2.5
1.5
0.5
10
40
10
50
30
20
1
−80
2
1
0
0
0
0
Common source
I D = 13 A
Ta = 25°C
Pulse test
V DS
10
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
−40
Drain-source voltage V
Ambient temperature Ta (
−0.2
Total gate charge Q
Pulse test
8
Ta = 25°C
4.5
V GS
Dynamic input/output
3
0
characteristics
−0.4
16
I
DR
V
th
V DD = 6 V
– V
40
– Ta
1
−0.6
DS
24
24 V
80
g
DS
TPC8020-H
(nC)
−0.8
V GS = 0 V
12 V
°
32
(V)
120
C)
2006-11-16
−1.0
160
40
20
8
16
12
4
0