tpc8020-h TOSHIBA Semiconductor CORPORATION, tpc8020-h Datasheet - Page 3
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tpc8020-h
Manufacturer Part Number
tpc8020-h
Description
Toshiba Field Effect Transistor Silicon N-channel Mos Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPC8020-H.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPC8020-H
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
SW
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
V
V
I
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
GS
3
= 13 A, V
(Ta = 25°C)
= ±16 V, V
= 30 V, V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 10 V, V
∼ − 24 V, V
∼ − 24 V, V
∼ − 24 V, V
10 V
0 V
Test Condition
Test Condition
w
D
D
D
GS
GS
GS
D
GS
GS
= 10 μs
GS
GS
GS
= 1 mA
= 6.5 A
DS
= 6.5 A
= 6.5 A
⎯
= 0 V
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
I
D
V
= 6.5 A
DD
D
∼ − 15 V
D
D
= 13 A
= 13 A
= 13 A
V
OUT
Min
Min
1.1
30
15
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1395
Typ.
Typ.
140
525
9.5
6.8
4.5
4.9
6.9
32
29
23
13
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3
9
8
TPC8020-H
2006-11-16
−1.2
Max
Max
±10
2.3
10
13
52
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
9
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V