tpc8218-h TOSHIBA Semiconductor CORPORATION, tpc8218-h Datasheet - Page 3

• Manufacturer Part Number: tpc8218-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time
Total gate charge
(gate-source plus gate-drain)
(Note 7)
Gate-source charge 1
Gate-drain (“Miller”) charge
Gate switch charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
I
I
C
Q
Q
|Y
C
C
Q
GSS
DSS
V
Rg
t
t
Q
oss
on
off
t
t
gs1
SW
rss
iss
gd
th
fs
r
f
g
|
Symbol
V
I
DRP
DSF
V
V
I
I
V
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
GS
GS
DS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
Duty ≤ 1%, t
= 60 V, V
= 10 V, I
= 10 V , I
= 10 V, V
= 10 V, V
≈ 48 V, V
≈ 48 V, V
≈ 48 V, V
= ±20 V, V
= 4.5 V, I
= 10 V , I
V
GS
I
DR
10 V
0 V
3
= 3.8 A, V
D
GS
GS
D
D
D
(Ta = 25°C)
GS
GS
GS
GS
GS
GS
Test Condition
w
= 0.1 mA
DS
= 1.9 A
= 1.9 A
= 1.9 A
= 10
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 5 MHz
= 10 V, I
= 5 V, I
= 10 V, I
= 0 V
Test Condition
μ
GS
s
I
D
V
D
⎯
D
D
= 0 V
DD
= 3.8 A
= 1.9 A
= 3.8 A
= 3.8 A
≈ 30 V
出力
Min
Min
1.3
60
45
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
6
Typ.
Typ.
640
3.2
1.8
6.7
1.8
5.7
2.1
1.8
2.6
43
38
12
25
90
18
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPC8218-H
2009-06-23
±100
15.2
−1.2
Max
Max
900
2.3
4.6
10
64
57
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
nA
μA
pF
ns
Ω
V
V
S
A
V