tpc8218-h TOSHIBA Semiconductor CORPORATION, tpc8218-h Datasheet - Page 5

• Manufacturer Part Number: tpc8218-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
100
1.6
0.8
1.2
0.4
80
60
40
20
10
−80
0
0.1
2
0
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V GS = 10 V
50
Device mounted on a Glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t=10s
(1)Single-device operation (Note 3a)
(2)Single-device value at dual operation (Note 3b)
(3)Single-device operation (Note 3a)
(4)Single-device value at dual operation (Note 3b)
Capacitance – V
0
1
R
I D = 1.0,1.9,3.8 A
DS (ON)
P
D
100
40
– Ta
– Ta
I D = 1.0,1.9,3.8 A
80
10
DS
DS
150
C oss
C rss
C iss
(V)
120
160
100
200
5
100
0.1
2.5
1.5
0.5
10
50
40
30
10
20
1
−80
0
2
1
0
0
0
12
Common source
V DS = 10 V
I D = 0.1 mA
Pulse test
24
Common source
Ta = 25°C
Pulse test
V DS = 48 V
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total Gate charge Q
4
10
Dynamic input/output
−0.4
0
characteristics
3
I
8
DR
V
12
th
−0.6
2
– V
40
– Ta
1
DS
4.5
V GS
12
24
−0.8
V DD = 48 V
80
g
V GS = 0 V
DS
Common source
I D = 3.8 A
Ta = 25°C
Pulse test
(nC)
16
(V)
−1.0
TPC8218-H
120
2009-06-23
−1.2
160
20
20
12
16
8
4
0