tpc8218-h TOSHIBA Semiconductor CORPORATION, tpc8218-h Datasheet - Page 4

• Manufacturer Part Number: tpc8218-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
6
3
0
5
4
3
2
1
0
5
4
2
1
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
10
Drain-source voltage V
Gate-source voltage V
4.5
0.2
1
3.8
Drain current I
3.5
3.3
Ta = −55°C
0.4
2
⎪Y
I
I
D
3.2
D
100
fs
– V
– V
100
⎪ – I
1
DS
GS
0.6
D
3
D
Ta = −55°C
25
GS
DS
25
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.7 V
0.8
4
(V)
(V)
2.8
3.1
2.9
3
10
1
5
4
1000
100
0.4
0.3
0.2
0.1
10
10
8
6
4
2
0
0
0.1
0
0
Common source
Ta = 25°C
Pulse test
10
Drain-source voltage V
Gate-source voltage V
4.5
0.4
2
3.8
Drain current I
3.6
R
3.5
0.8
V
DS (ON)
4
3.4
I
DS
D
– V
V GS = 4.5 V
– V
1
DS
10
GS
– I
1.2
6
D
I D = 3.8 A
D
1.9
1.0
GS
DS
(A)
Common source
Ta =25°C
Pulse test
Common source
Ta = 25℃
Pulse test
V GS = 2.8 V
1.6
8
TPC8218-H
(V)
(V)
2009-06-23
3.3
3.2
3.1
2.9
3
10
10
2