tpc8210 TOSHIBA Semiconductor CORPORATION, tpc8210 Datasheet - Page 3

• Manufacturer Part Number: tpc8210
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut−OFF current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn−ON time
Fall time
Turn−OFF time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
Symbol
(BR) DSS
(BR) DSS
DS (ON)
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
V
t
t
Q
DSF
off
oss
tr
on
rss
t
iss
gs
gd
th
fs
f
g
|
V
V
I
I
V
V
V
V
V
V
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
Duty < = 1%, t
= 10 mA, V
= 10 mA, V
= 8 A, V
V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4.5 V, I
= 10 V, I
≈ 24 V, V
GS
10 V
0 V
GS
3
(Ta = 25°C)
D
D
D
GS
GS
w
D
GS
GS
GS
Test Condition
Test Condition
= 1 mA
= 4 A
DS
= 4 A
= 0 V
= 10 μs
= 4 A
= 0 V
= −20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
= 0 V
—
V
I
DD
D
= 4 A
D
∼ − 15 V
= 8 A
V
OUT
Min
Min
1.3
6.5
30
15
—
―
⎯
―
―
―
―
―
―
―
―
―
―
―
—
—
3530
Typ.
Typ.
495
580
115
―
―
―
⎯
―
13
11
13
26
39
32
75
19
—
—
6
2007-01-16
TPC8210
−1.2
Max
Max
±10
2.5
10
20
15
32
―
⎯
―
―
―
―
―
―
―
―
―
―
―
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V