tpc8210 TOSHIBA Semiconductor CORPORATION, tpc8210 Datasheet - Page 4

• Manufacturer Part Number: tpc8210
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
20
16
12
20
16
12
10
8
4
0
8
4
0
1
0.1
0
0
25°C
Common source
V DS = 10 V
Pulse test
0.5
Drain-source voltage V
Gate-source voltage V
1
1
−55°C
Drain current I
1
10
4
6
8
1.5
2
I
I
|Y
D
D
fs
– V
– V
| – I
2
25
3
100
DS
GS
D
3
D
2.5
Tc = 100°C
10
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
Common source
V DS = 10 V
Pulse test
3
Ta = −55°C
(V)
V GS = 2.3 V
(V)
4
2.5
2.9
2.8
2.4
2.6
2.5
2.7
100
5
4
4
100
0.8
0.6
0.4
0.2
10
30
10
8
6
4
2
0
1
0
3
1
0
0
1
10
8
6
0.2
Drain-source voltage V
4
Gate-source voltage V
8
3
V GE = 4.5 V
Drain current I
3
2.9
R
2.8
0.4
4
V
DS (ON)
8
I
V GS = 10 V
DS
D
– V
10
– V
DS
GS
– I
0.6
12
D
D
I D = 2A
Common source
Ta = 25°C
Pulse test
GS
Common source
Ta = 25°C
Pulse test
DS
(A)
Common source
Ta = 25°C
Pulse test
30
(V)
(V)
V GS = 2.2 V
0.8
16
2.7
2.6
2.5
2.4
2.3
2007-01-16
TPC8210
100
1.0
20