tpc8210 TOSHIBA Semiconductor CORPORATION, tpc8210 Datasheet - Page 5

• Manufacturer Part Number: tpc8210
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.5
1.0
0.5
25
20
15
10
10
−80
5
0
2
0
0.1
0
Common source
V GS = 10 V
I D = 1 mA
Pulse test
(1)
(2)
(3)
(4)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
10 V
50
Capacitance – V
0
1
R
DS (ON)
P
D
100
40
– Ta
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
– Ta
I D = 8, 4, 2 A
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
80
10
DS
DS
I D = 8, 4, 2 A
Common source
Pulse test
150
(V)
120
C oss
C rss
C iss
160
100
200
5
100
2.5
1.5
0.5
10
30
25
20
15
10
3
2
1
0
−80
1
5
0
0
0
12
6
Common source
V
f = 1 mA
Pulse test
DS
Dynamic input/output characteristics
V DD = 24 V
−0.2
= 10 V
V DS
−40
Drain-source voltage V
20
Ambient temperature Ta (°C)
Total gate charge Q
3
−0.4
5
0
40
I
DR
V
th
−0.6
– V
40
12
– Ta
1
DS
60
V DD = 24 V
−0.8
g
80
DS
Common source
Ta = 25°C
I
Pulse test
D
Common source
Ta = 25°C
Pulse test
6
(nC)
= 8 A
(V)
V GS = 0 V
80
−1
120
2007-01-16
TPC8210
−1.2
140
100
30
25
20
15
10
5
0