buk7211-55b NXP Semiconductors, buk7211-55b Datasheet - Page 6

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buk7211-55b

Manufacturer Part Number
buk7211-55b
Description
Buk7211-55b Trenchmos Tm Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 10807
Objective data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
(m )
T
T
I D
(A)
300
200
100
j
j
= 25 C; t
25
20
15
10
= 25 C; t
5
0
function of drain-source voltage; typical values.
of drain current; typical values.
0
0
Label is V GS (V)
20
16
6
p
p
= 300 s
= 300 s
2
6.5
100
7
4
8
6
Label is V GS (V)
200
12
10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
10
8
I D (A)
V DS (V)
03nl07
03nl06
20
Rev. 01 — 12 December 2002
300
10
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
R DSon
T
a
(m )
j
a
1.5
0.5
= 25 C; I
18
14
10
=
6
2
1
0
of gate-source voltage; typical values.
factor as a function of junction temperature.
-60
---------------------------- -
R
5
DSon 25 C
R
DSon
D
= 25 A
0
TrenchMOS™ standard level FET
10
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
BUK7211-55B
60
15
120
V GS (V)
T j ( C)
03nl05
03ne89
180
20
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