buk7211-55b NXP Semiconductors, buk7211-55b Datasheet - Page 7

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buk7211-55b

Manufacturer Part Number
buk7211-55b
Description
Buk7211-55b Trenchmos Tm Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 10807
Objective data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
V GS(th)
g fs
(S)
I
T
(V)
D
j
= 1 mA; V
= 25 C; V
50
40
30
20
10
5
4
3
2
1
0
0
junction temperature.
drain current; typical values.
-60
0
DS
DS
= V
= 25 V
20
0
GS
60
40
max
typ
min
120
60
T j ( C)
I D (A)
03aa32
03nl03
Rev. 01 — 12 December 2002
180
80
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
C
(pF)
(A)
T
V
I D
3000
2000
1000
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
j
GS
= 25 C; V
0
gate-source voltage.
as a function of drain-source voltage; typical
values.
10 -1
= 0 V; f = 1 MHz
0
DS
= V
TrenchMOS™ standard level FET
GS
2
1
C iss
C oss
C rss
min
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
BUK7211-55B
typ
10
4
max
V DS (V)
V GS (V)
03aa35
03nl08
10 2
6
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