buk7211-55b NXP Semiconductors, buk7211-55b Datasheet - Page 8

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buk7211-55b

Manufacturer Part Number
buk7211-55b
Description
Buk7211-55b Trenchmos Tm Standard Level Fet
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 10807
Objective data
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
I D
V
V
(A)
100
DS
GS
75
50
25
0
function of gate-source voltage; typical values.
= 25 V
= 0 V
0
T j = 175 C
2
4
I S
(A)
100
T j = 25 C
75
50
25
0
6
0.0
V GS (V)
03nl04
Rev. 01 — 12 December 2002
8
0.3
T j = 175 C
0.6
Fig 14. Gate-source voltage as a function of turn-on
V GS
T
(V)
j
= 25 C; I
10
0.9
T j = 25 C
8
6
4
2
0
gate charge; typical values.
0
V SD (V)
03nl01
D
V DD = 14 V
= 25 A
1.2
10
TrenchMOS™ standard level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
BUK7211-55B
20
V DD = 44 V
30
Q G (nC)
03nl02
40
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