blf2022-70 NXP Semiconductors, blf2022-70 Datasheet - Page 2

• Manufacturer Part Number: blf2022-70
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
70 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
QUICK REFERENCE DATA
RF performance at T
2003 Feb 24
2-tone, class-AB
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
MODE OF OPERATION
Typical W-CDMA performance at a supply voltage of
28 V and I
– Output power = 7.5 W (AV)
– Gain = 12.5 dB
– Efficiency = 20%
– ACPR = 42 dBc at 3.84 MHz
– d
Easy power control
Excellent ruggedness
High power gain
Excellent thermal stability
Designed for broadband operation (2000 to 2200 MHz)
Internally matched for ease of use.
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range.
UHF power LDMOS transistor
im
= 36 dBc
DQ
of 1 A:
h
= 25 C in a common source test circuit.
f
1
= 2170; f
(MHz)
f
2
= 2170.1
CAUTION
V
(V)
28
2
DS
PINNING - SOT502A
handbook, halfpage
PIN
65 (PEP)
1
2
3
(W)
P
L
Fig.1 Simplified outline.
Top view
drain
gate
source, connected to flange
(dB)
>11
G
p
1
2
DESCRIPTION
Product specification
BLF2022-70
>30
(%)
MBK394
3
D
(dBc)
d
im
25