blf2022-70 NXP Semiconductors, blf2022-70 Datasheet - Page 5

• Manufacturer Part Number: blf2022-70
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
2003 Feb 24
handbook, halfpage
UHF power LDMOS transistor
V
f
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.6
1
DS
= 2135 MHz; f
(dB)
G p
= 28 V; I
15
10
5
0
30
Power gain and drain efficiency as functions
of average load power; typical values.
DQ
= 450 mA; T
2
32
= 2145 MHz.
G p
34
h
25 C;
36
D
P L(AV) (dBm)
38
MGW534
40
30
20
10
0
(%)
D
5
handbook, halfpage
V
f
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
Fig.7
1
DS
= 2135 MHz; f
(dBc)
d im
= 28 V; I
20
40
60
0
30
Intermodulation distortion and adjacent
channel power ratio as functions of average
load power; typical values.
DQ
= 450 mA; T
2
32
= 2145 MHz.
d im
34
h
25 C;
36
BLF2022-70
Product specification
P L(AV) (dBm)
ACLR
38
MGW535
40
0
ACLR
(dBc)
20
40
60