tpcm8102 TOSHIBA Semiconductor CORPORATION, tpcm8102 Datasheet - Page 3

• Manufacturer Part Number: tpcm8102
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“Miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn-on time
Fall time
Turn-off time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= − 10 mA, V
= − 10 mA, V
GS
= − 25 A
3
= − 25 A, V
(Ta = 25°C)
= ± 20 V, V
= − 30 V, V
= − 10 V, I
= − 4 V, I
= − 10 V, I
= − 10 V, I
= − 10 V, V
≈
≤
− 10 V
− 24 V, V
1%, t
0 V
Test Condition
Test Condition
w
D
D
D
= 10 μ s
D
GS
GS
GS
DS
GS
= − 12 A
GS
GS
= − 1 mA
= − 12 A
= − 12 A
⎯
= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0V, f = 1MHz
= − 10 V,
I
D
V
= − 12 A
DD
≈
− 15 V
V
OUT
− 0.8
Min
− 30
− 13
Min
22
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2450
Typ.
Typ.
530
740
145
340
6.0
11
44
13
22
60
11
19
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCM8102
2008-03-21
± 100
− 2.0
Max
Max
− 10
7.7
-75
1.2
16
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
m Ω
nC
nA
μ A
pF
ns
V
V
S
A
V