tpcm8102 TOSHIBA Semiconductor CORPORATION, tpcm8102 Datasheet - Page 4

• Manufacturer Part Number: tpcm8102
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−25
−20
−15
−10
−50
−40
−30
−20
−10
100
0.1
−5
10
−0.1
0
0
1
0
0
−4.5
−10
−5
−6
−8
Common source
V DS = −10 V
Pulse test
Drain − source voltage V
Gate − source voltage V
−0.2
−1
Drain current I
25
Ta = −55°C
−1
100
−0.4
100
−4.2
−2
I
I
|Y
D
D
−4
fs
−3.4
– V
– V
−3.8
| – I
Ta = −55°C
25
−3.6
DS
GS
−0.6
D
−3
D
−3.2
−10
GS
(A)
DS
Common source
V DS = −10 V
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.6 V
−0.8
−4
(V)
(V)
−2.8
−3
−100
−1
−5
4
−0.5
−0.4
−0.3
−0.2
−0.1
−50
−40
−30
−20
−10
100
10
−0.1
0
0
1
0
0
−
−6
−8
−10
Common source
Ta = 25°C
Pulse test
5
Drain-source voltage V
Gate − source voltage V
−0.4
−2
Drain current I
−1
R
−4.5
−0.8
V
−4
DS (ON)
I
DS
D
−4
– V
– V
V GS = −4
−3.8
−10 V
−3.6
−6
DS
−1.2
GS
– I
−6
D
−12
D
−10
GS
DS
(A)
I D = −25 A
Common source
Ta = 25°C
Pulse test
V GS = −2.6 V
Common source
Ta = 25°C
Pulse test
−1.6
−8
(V)
(V)
−3.4
TPCM8102
2008-03-21
−2.8
−3.2
−3
−100
−10
−2