tpcm8102 TOSHIBA Semiconductor CORPORATION, tpcm8102 Datasheet - Page 5

• Manufacturer Part Number: tpcm8102
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
−30
−20
−10
−25
−15
20
16
12
−5
−0.1
−80
8
4
0
0
0
−6
−12
V DD = −24V
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = −4 V
V DS
−40
Drain − source voltage V
Ambient temperature Ta (
V GS = −10 V
20
Total gate charge Q
Dynamic input/output
Capacitance – V
−1
0
characteristics
R
DS (ON)
40
−12
40
−6
V GS
– Ta
60
I D = −6, −12, −25 A
I D = −25 A
−10
80
DS
g
−12
DS
Common source
I D = −40 A
Ta = 25°C
Pulse test
(nC)
V DD = −24V
80
−6
°
C)
(V)
120
C rss
C iss
C oss
−100
160
100
−30
−20
−10
−25
−15
−5
0
5
−100
−0.1
−1.6
−1.2
−0.8
−0.4
−10
−1
−2
−80
0
0
Common source
V DS = −10 V
I D = −1mA
Pulse test
Drain − source voltage V
−40
−10
Ambient temperature Ta (
0.2
0
0.4
I
DR
V
−4
th
– V
40
– Ta
DS
0.6
−1
80
DS
−3
Common source
Ta = 25°C
Pulse test
V GS = 0 V
0.8
°
(V)
120
C)
TPCM8102
2008-03-21
160
1