m28f410 STMicroelectronics, m28f410 Datasheet - Page 13
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m28f410
Manufacturer Part Number
m28f410
Description
4 Megabit X8 Or X16, Block Erase Flash Memory
Manufacturer
STMicroelectronics
Datasheet
1.M28F410.pdf
(38 pages)
Table 15. BYTE AC Characteristics
(T
Notes: 1. Sampled only, not 100% tested.
Table 16. BYTE AC Characteristics
(T
Notes: 1. Sampled only, not 100% tested.
Symbol
Symbol
t
t
A
A
BLQV
BLQV
t
t
t
t
t
t
t
t
BHQV
BHQV
ELBH
BLQZ
ELBH
BLQZ
ELBL
ELBL
= 0 to 70°C or –40 to 85°C; V
= –40 to 125°C; V
2. It is equal to t
2. It is equal to t
(2)
(2)
Chip Enable Low
to BYTE Low
Chip Enable Low
to BYTE High
BYTE Low to
Output Valid
BYTE High to
Output Valid
BYTE Low to
Output Hi-Z
Chip Enable Low
to BYTE Low
Chip Enable Low
to BYTE High
BYTE Low to
Output Valid
BYTE High to
Output Valid
BYTE Low to
Output Hi-Z
Parameter
Parameter
AVQV
AVQV
when measured from DQ15A-1 valid.
when measured from DQ15A-1 valid.
PP
= 12V ± 5%)
V
V
Min
Min
CC
CC
Interface
Interface
PP
SRAM
SRAM
= 5V ± 5%
= 5V ± 5%
-70
-80
= 12V ± 5%)
(1)
(1)
Max
Max
70
70
25
80
80
30
5
5
5
5
V
V
Min
Min
CC
CC
Interface
Interface
EPROM
EPROM
= 5V ± 10%
= 5V ± 10%
-80
-90
M28F410 / 20
Max
M28F410 / 20
Max
80
80
30
90
90
35
5
5
5
5
V
V
Min
Min
CC
CC
Interface
Interface
EPROM
EPROM
= 5V ± 10%
= 5V ± 10%
-100
-100
Max
Max
100
100
100
100
35
40
5
5
5
5
V
V
Min
Min
CC
CC
Interface
Interface
EPROM
EPROM
= 5V ± 10%
= 5V ± 10%
-120
-120
Max
Max
120
120
120
120
35
45
5
5
5
5
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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